Question 1
Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET.
State the name of the part shown in this MOSFET structure that causes the input resistance to be very large.
[1 mark]
Answer
Which terminal of the MOSFET is connected directly to 0 V when it is used as a simple switch?
Tick () one box.
[1 mark]
Answer
Figure 2 shows how the drain–source current IDS of the MOSFET varies with drain–source voltage VDS for a range of gate–source voltages VGS.
The MOSFET is used as a simple switch in a filament lamp circuit. The circuit uses power rails of 12 V and 0 V. The resistance of the lamp is 154 Ω when operating at its full power of 0.65 W.
Deduce the minimum value of VGS needed for the lamp to operate at full power.
[2 marks]
Answer
Figure 3 shows an individual MOSFET. The drain–source leakage current IDSS for this MOSFET is about 10 nA.
Figure 4 shows a microchip where millions of MOSFETs are combined to enable complex processes to be carried out on one chip.
A mobile phone has a central processing unit (CPU) which uses a microchip similar to the one in Figure 4.
Table 1 shows the technical specification for the mobile phone.
A fully charged battery with a capacity of 1 A h allows 3600 C of charge to flow through it before it is fully discharged.
The IDSS value for each MOSFET used in the mobile phone CPU must be different from that measured in the individual MOSFET shown in Figure 3.
Discuss, using the data provided, the reason for this difference.
[3 marks]
Answer